Consider a long-base silicon p+ -n diode. If the diode parameters are given by NA = 1019 cm−3, ND = 5 × 1016 cm−3, Dp = 4 cm2/s, Dn = 20 cm2/s, τp = 10−8 s, τn = 10−6 s, n= = 1.4 × 1010 cm−3, and A = 10−4 cm2:
(a) Calculate the hole injection current into the n region for forward-bias voltages of 0.1, 0.3, 0.5, and 0.7 V at 300 K.
(b) Repeat (a) for the electron injection current into the p+-n region.
(c) What is the total injection current for V = 0, 0.3, and 0.5 V if the silicon p-n diode is a short-base diode with p-emitter width of WE = 5 × 10−5 cm and n-base width of WB = 10−3 cm?
