solution

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48) and (10.49) to (10.51), with Ds ≈ 1.1 × 10¹³(1 − c²)/c² states/cm2-eV, where Ds is the interface state density,

(a) What is the barrier height as D_s approaches infinity? Explain the Fermilevel pinning effect under this condition.

(b) If D_s → 0, what is the value of c₂ and the expression for φBn?

(c) If the values of c₂, c₃, and χ_s for Si, GaAs, and GaP Schottky contacts are given by

calculate the values of D_s, qφ₀, and qφB_n for the above Schottky diodes.