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Consider an intrinsic photoconductor. If the wavelength of incident photons is λ = 0.5 µm, the optical absorption coefficient at this wavelength is α = 104 cm−1, the reflection coefficient is R = 0.3, the excess electron lifetime τn = 10 µs, and the photon flux density is 1014 cm−2 -s−1, calculate the excess electron density generated by the incident photons described in this problem. Assume uniform absorption in this thin film photoconductor. If the electron mobility µn is equal to 1,500 cm2/V · s, hole mobility µp = 500 cm2/V ·s, and assuming τn = τp, what is the photosensitivity factor for this intrinsic photoconductor?


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